Growth of Gallium Nitride-Based Nitride Semiconductors by PAMBE for Development of Optoelectronic and Microelectronic Devices
Rhee, Seunghun
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https://hdl.handle.net/2142/80840
Description
Title
Growth of Gallium Nitride-Based Nitride Semiconductors by PAMBE for Development of Optoelectronic and Microelectronic Devices
Author(s)
Rhee, Seunghun
Issue Date
2003
Doctoral Committee Chair(s)
Kim, Kyekyoon
Department of Study
Electrical Engineering
Discipline
Electrical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Electronics and Electrical
Language
eng
Abstract
Several devices, i.e., homo junction light-emitting diode (HJ LED), multi-quantum well (MQW) LED, and buried gate junction field effect transistor (BGJFET), are fabricated by PAMBE and their characteristics are demonstrated to show the high quality of GaN-based nitride films grown by PAMBE.
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