Development of Asymmetric Fabry -Perot Modulators and Power HBT Circuits for High-Speed Applications
Huang, JianJang
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https://hdl.handle.net/2142/80792
Description
Title
Development of Asymmetric Fabry -Perot Modulators and Power HBT Circuits for High-Speed Applications
Author(s)
Huang, JianJang
Issue Date
2002
Doctoral Committee Chair(s)
Feng, Milton
Department of Study
Electrical Engineering
Discipline
Electrical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Electronics and Electrical
Language
eng
Abstract
To identify the limitation of DC performance of GaN HBTs, the CE IC-VCE modulation curves in AlGaN/GaN graded emitter HBTs at low temperature was studied in order to understand the limiting issues related to the low CE current gain of a GaN HBT. We have measured a CE current gain of 31.0 at 175 K and 11.3 at 295 K. The increase in collector current and CE current gain at lower temperature can be attributed to the reduced base recombination current, which is due to the carrier traps associated with defect (dislocation) centers in the base-emitter junction.
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