Submicron Scaling in Indium Phosphide/indium Gallium Arsenide Single Heterojunction Bipolar Transistors
Hattendorf, Michael Leonard
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https://hdl.handle.net/2142/80791
Description
Title
Submicron Scaling in Indium Phosphide/indium Gallium Arsenide Single Heterojunction Bipolar Transistors
Author(s)
Hattendorf, Michael Leonard
Issue Date
2002
Doctoral Committee Chair(s)
Feng, Milton
Department of Study
Electrical Engineering
Discipline
Electrical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Electronics and Electrical
Language
eng
Abstract
Measurement-based characterization of SHBTs scaled down to 0.35 mum was performed, and detailed understanding of do and RF scaling properties was developed. Important scaling phenomena that emerge as the emitter width is scaled to the deep submicron regime were identified and analyzed. A unique small-signal model extraction procedure was developed and used to study base resistance scaling in submicron HBTs. A measurement-based analysis technique was developed to quantitatively describe the current spreading phenomenon in submicron InP HBTs for the first time. These results suggest that additional device scaling along with improvements in epitaxial materials should lead to further progress in the development of high-speed, low power electronics using InP-based HBTs.
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