Compliant Epitaxy of Iii-V Compound Semiconductors for Optoelectronic Device Applications
Pickrell, Gregory William
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https://hdl.handle.net/2142/80769
Description
Title
Compliant Epitaxy of Iii-V Compound Semiconductors for Optoelectronic Device Applications
Author(s)
Pickrell, Gregory William
Issue Date
2002
Doctoral Committee Chair(s)
Cheng, K.Y.
Department of Study
Electrical and Computer Engineering
Discipline
Electrical and Computer Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Electronics and Electrical
Language
eng
Abstract
The second technique uses a novel approach: very-low temperature molecular beam epitaxy (VLT-MBE) which involves growth of amorphous and polycrystalline materials. Using GaP and laterally oxidized AlAs materials, substrate independent DBRs were fabricated at wavelengths in both the visible spectrum, 480 nm to 550 nm, as well as those used in the telecommunications industry, 1310 nm to 1550 nm. In addition, VLTMBE-grown InGaP was used as a protection layer during post-growth oxidation processes. These InGaP layers were used to protect the In0.25Ga0.75As layers, mentioned above, during the lateral oxidation relaxation process. The VLT-grown InGaP films were found to be superior to other protection layers, such as SiNx and SiO 2, due to their ability to allow dislocation reduction during the oxidation process. Because of the nature of the VLT-grown materials, they can be used in any material system using a variety of host-substrates, making this growth technique highly adaptable and useful.
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