Exploratory Investigation of Erbium Silicide NMOS as a Candidate for a Schottky Barrier CMOS Process
Faulkner, Carl McCarty
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https://hdl.handle.net/2142/80748
Description
Title
Exploratory Investigation of Erbium Silicide NMOS as a Candidate for a Schottky Barrier CMOS Process
Author(s)
Faulkner, Carl McCarty
Issue Date
2001
Doctoral Committee Chair(s)
Tucker, John R.
Department of Study
Electrical Engineering
Discipline
Electrical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Electronics and Electrical
Language
eng
Abstract
Long channel transistors using both platinum and erbium silicide are fabricated and their performance compared. Processing issues, including erbium's reactivity with oxide and tendency to creep, and how they affect the NMOS performance, are discussed.
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