Development of Direct Ion -Implanted Gallium Arsenide MESFET and Low-Actuation-Voltage RF MEM Switches
Shen, Shyh-Chiang
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https://hdl.handle.net/2142/80739
Description
Title
Development of Direct Ion -Implanted Gallium Arsenide MESFET and Low-Actuation-Voltage RF MEM Switches
Author(s)
Shen, Shyh-Chiang
Issue Date
2001
Doctoral Committee Chair(s)
Feng, Milton
Department of Study
Electrical Engineering
Discipline
Electrical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Electronics and Electrical
Language
eng
Abstract
The high-performance GaAs MESFETs will provide a solution to low-cost NMCs, and the circuit results justify the readiness of this technology in Ka-band and V-band applications. The low operation-voltage switches will facilitate the direct integration with current MMICs and provide a solution to broadband reconfigurable circuits. The mature GaAs MESFET technology integrated with RF MEM switches will have a direct impact on RF circuit applications in the future.
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