Core-Level Photoemission Studies of the Structure of Semiconductor Surfaces and Interfaces
Luh, Dah-An
This item is only available for download by members of the University of Illinois community. Students, faculty, and staff at the U of I may log in with your NetID and password to view the item. If you are trying to access an Illinois-restricted dissertation or thesis, you can request a copy through your library's Inter-Library Loan office or purchase a copy directly from ProQuest.
Permalink
https://hdl.handle.net/2142/80681
Description
Title
Core-Level Photoemission Studies of the Structure of Semiconductor Surfaces and Interfaces
Author(s)
Luh, Dah-An
Issue Date
2000
Doctoral Committee Chair(s)
T.-C. Chiang
Department of Study
Physics
Discipline
Physics
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Physics, Condensed Matter
Language
eng
Abstract
To determine to the chemical depth profile of the Si(111)/SiO2 interface, the photoemission intensity of the Si 2p core level from the Si(111)/SiO2 system has been measured as a function of photoelectron emission angle. The SiO2 layer is amorphous, and photoelectron diffraction techniques cannot be employed. A new approach based on the abrupt-interface model is used to study the structure of the Si(111)/SiO 2 interface. In this model, all the sub-oxide states are confined at the interface area, and the interface is formed by cross-linking dangling bonds between the truncated Si(111) and SiO2 surfaces. Our results show that this simple statistical cross-linking model reproduces the intensity ratios among different suboxide states, thus confirming the abrupt-interface model.
Use this login method if you
don't
have an
@illinois.edu
email address.
(Oops, I do have one)
IDEALS migrated to a new platform on June 23, 2022. If you created
your account prior to this date, you will have to reset your password
using the forgot-password link below.
