Surface Structure and Growth Mechanisms of Hydrogenated Amorphous Silicon
Kilian, Karland Arthur
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https://hdl.handle.net/2142/80666
Description
Title
Surface Structure and Growth Mechanisms of Hydrogenated Amorphous Silicon
Author(s)
Kilian, Karland Arthur
Issue Date
1999
Doctoral Committee Chair(s)
Adams, James B.
Department of Study
Physics
Discipline
Physics
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Electronics and Electrical
Language
eng
Abstract
We investigate two pathways for SiH3 incorporation into growing a-Si:H. It has been thought that growth proceeds by H abstraction by atomic H or SiH3. Recently, a mechanism of direct insertion of SiH3 into a surface Si-Si bond has been proposed to explain new IR data. We determine the activation energies for key steps in these pathways, and discuss the validity of each in light of our results.
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