Interfacial Studies of Buried Semiconductor Surfaces

Aburano, Richard Dean

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Description

Title

Interfacial Studies of Buried Semiconductor Surfaces

Author(s)

Aburano, Richard Dean

Issue Date

1997

Doctoral Committee Chair(s)

Chiang, Tai-Chang

Department of Study

Physics

Discipline

Physics

Degree Granting Institution

University of Illinois at Urbana-Champaign

Degree Name

Ph.D.

Degree Level

Dissertation

Keyword(s)

Engineering, Materials Science

Language

eng

Abstract

"X-ray scattering has been used to study the structures of various semiconductor interfaces. Investigations have been performed on noble-metal/Si(111) and C60/semiconductor systems. The bulk of the noble-metal/Si(111) work has centered on the Ag/Si(111) system where the structure of the interface is dependent on the interfacial preparation. The results of the C60/semiconductor studies revealed C60/Si(111), C60/Si(100), and C60/Ge(100) interfaces retain the periodicities of the clean semiconductor surface reconstructions. In fact, the atomic features of these reconstructions from the dimerized (100) surfaces to the adatoms of the Si(111)-(7 $\times$ 7) surface were preserved under the fullerene film. This is an exceptional result since buried reconstructed surfaces typically revert to a bulk-like (1 $\times$ 1) interfacial structure. These studies were performed in the traditional ""Bragg"" or reflection geometry. The use of the ""Laue"" or transmission geometry for similar structural studies was also evaluated."

Graduation Semester

1997

Type of Resource

text

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http://hdl.handle.net/2142/80642

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