Atomic -Scale Statistical Models of Semiconductor Device *Reliability
McMahon, William Joseph
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https://hdl.handle.net/2142/80480
Description
Title
Atomic -Scale Statistical Models of Semiconductor Device *Reliability
Author(s)
McMahon, William Joseph
Issue Date
2002
Doctoral Committee Chair(s)
Hess, Karl
Department of Study
Physics
Discipline
Physics
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Physics, Condensed Matter
Language
eng
Abstract
We have developed a detailed model for hot-carrier induced interface state generation in silicon metal-oxide semiconductor field-effect transistors (MOSFETs). In the process, we discuss a different interpretation of the isotope effect of silicon-hydrogen (deuterium) bond dissociation by electronic excitation for both the interface and scanning tunneling microscope induced silicon-hydrogen bond-breaking on the silicon surface. We demonstrate the distribution of silicon-hydrogen bond energies as the physical origin for the sublinear time dependence of the generation of silicon-silicon dioxide interface traps under hot electron stress. We demonstrate the consequences of this idea for the reliability of MOSFET devices under hot electron stress, and point out that one must interpret the shape of the wearout portion of the failure function of all intrinsic MOSFET failure processes as due to a combination of bond energy distributions, geometric effects (i.e. percolation pathways for time-dependent dielectric breakdown of the silicon dioxide), and feedback effects. The bond energy distribution has severe consequences for all failure modes that take place either in the oxide or at an interface for devices where the defects required for failure are on the order of tens. These consequences increase enormously as the required defects for failure decrease. For interface trap generation, feedback effects and geometric effects are small so we are able to derive an approximate analytic form for the failure function, and demonstrate these consequences. Finally, we introduce a multiple-carrier model for the breaking of silicon-hydrogen bonds at the interface. This model allows us to explain a variety of experimental effects that have been seen for small devices. It additionally implies a non-Arhennius behavior in the extrapolation of MOSFET lifetime vs. substrate current. Accurate lifetime extrapolation requires the incorporation of this effect.
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