Studies of Field -Induced Stress on Ultrathin Layers of Silicon Dioxide on a Silicon Substrate
Archer, Allan Phillip
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https://hdl.handle.net/2142/80459
Description
Title
Studies of Field -Induced Stress on Ultrathin Layers of Silicon Dioxide on a Silicon Substrate
Author(s)
Archer, Allan Phillip
Issue Date
2001
Doctoral Committee Chair(s)
Nayfeh, Munir H.
Department of Study
Physics
Discipline
Physics
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Physics, Condensed Matter
Language
eng
Abstract
We present here the results of an STM study of ultrathin silicon dioxide layers on a silicon substrate. We have found that under certain conditions, structures subjected to field-induced stress with the STM exhibit changes in their conductivity which we believe are evident in the images as the voltage of the STM is varied. We focus here on that subset of field stress parameters yielding structures which specifically exhibit this conductivity change.
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