Selective area epitaxy of III-V nanowires: toward nanowire-on-silicon tandem solar cells
Bassett, Kevin Paul
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https://hdl.handle.net/2142/78768
Description
Title
Selective area epitaxy of III-V nanowires: toward nanowire-on-silicon tandem solar cells
Author(s)
Bassett, Kevin Paul
Issue Date
2015-04-22
Director of Research (if dissertation) or Advisor (if thesis)
Li, Xiuling
Doctoral Committee Chair(s)
Li, Xiuling
Committee Member(s)
Lyding, Joseph W.
Carney, Paul S.
Dragic, Peter D
Department of Study
Electrical & Computer Eng
Discipline
Electrical & Computer Engr
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
nanowire
epitaxy
metalorganic chemical vapor deposition (MOCVD)
compound semiconductors
Abstract
Nanowires grown via the selective area epitaxy technique (SAE-NWs) are of great research interest for use in next-generation electronic and electro-optic devices. As compared to other nanowire growth techniques commonly studied, SAE-NW is a highly controllable process due to the use of a lithographically defined growth mask, and the lack of need for a catalytic seed particle results in impurity-free material with nearly atomically flat sidewalls formed on low index crystal facets. In this thesis, the SAE-NW growth technique is examined and progress in the field is reviewed. A study of the geometric evolution of SAE-NWs during growth is presented, followed by results of efforts to work towards fabrication of a tunnel diode for use in a nanowire-on-silicon solar cell. Finally, future directions for the continued study of SAE-NWs are outlined.
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