Characterization of GaN MOS-HEMT trap-related effects for power switching applications
Zhang, Dabin
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https://hdl.handle.net/2142/78692
Description
Title
Characterization of GaN MOS-HEMT trap-related effects for power switching applications
Author(s)
Zhang, Dabin
Issue Date
2015-04-30
Department of Study
Electrical & Computer Eng
Discipline
Electrical & Computer Engr
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
M.S.
Degree Level
Thesis
Keyword(s)
Gallium nitride (GaN)
Metal-Oxide-Semiconductor (MOS)
High-Electron-Mobility Transistor (HEMT)
Reliability
Abstract
This thesis presents the experiment setup and result of AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors (MOS-HEMTs) characterization. Various aspects of GaN MOS-HEMTs, such as the DC characteristic, temperature dependency, breakdown behavior and trap-related effects, were studied. Multiple customized measurement setups and configurations, including hardware and software, are discussed. We have estimated trap distribution using the capacitance and the conductance method. Pulse measurements and stress tests with various bias conditions were used to understand trap-related degradations. Performance and trap-related comparisons between our device and the literature are also included.
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