Nanolithographically defined semiconductor quantum dots
Yu, Lan
Loading…
Permalink
https://hdl.handle.net/2142/78307
Description
Title
Nanolithographically defined semiconductor quantum dots
Author(s)
Yu, Lan
Issue Date
2015-03-06
Director of Research (if dissertation) or Advisor (if thesis)
Wasserman, Daniel M.
Committee Member(s)
Wasserman, Daniel M.
Department of Study
Electrical & Computer Eng
Discipline
Electrical & Computer Engr
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
M.S.
Degree Level
Thesis
Keyword(s)
III-V Semiconductor
Light-emitting diode (LED)
Quantum dots
Abstract
In this thesis,nanolithographically de ned quantum dots are discussed including their fabrication process and optical properties. First, an introduction to the eld of quantum dots (QDs), and the advantages of QD-based optoelectronic devices are provided. The research presents our recent work demonstrating carrier con nement in quantum nanostructures
fabricated from epitaxially grown quantum wells (QWs) using a top-down nanosphere lithography, dry-etch and overgrowth fabrication process. Devices are characterized by a current density-voltage (JV) test, electroluminescence (EL) and photoluminescence (PL) spectroscopy. The quantum confi nement is simulated by COMSOL.
Use this login method if you
don't
have an
@illinois.edu
email address.
(Oops, I do have one)
IDEALS migrated to a new platform on June 23, 2022. If you created
your account prior to this date, you will have to reset your password
using the forgot-password link below.
