A Study of Electron Traps in Vapor Phase Epitaxial Gallium-Arsenide Grown in the Presence of Oxygen (Dlts, Deep Level Transient Spectroscopy, Semiconductors, Defects)
Ruby, Douglas Scott W.
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https://hdl.handle.net/2142/77386
Description
Title
A Study of Electron Traps in Vapor Phase Epitaxial Gallium-Arsenide Grown in the Presence of Oxygen (Dlts, Deep Level Transient Spectroscopy, Semiconductors, Defects)
Author(s)
Ruby, Douglas Scott W.
Issue Date
1985
Department of Study
Physics
Discipline
Physics
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Physics, Condensed Matter
Language
eng
Abstract
A detailed analysis of the measurement technique known as constant capacitance deep level transient spectroscopy is presented, which includes an accurate treatment of large and inhomogeneous defect densities, and which allows a precise determination of deep level concentrations and activation energies. The design and construction of the automated measurement apparatus are described, and the computer programs for the data acquisition and analysis are included.
The history of adding oxygen during the growth of GaAs is discussed and the motivation for this study is provided. Then, the effects of the addition of oxygen on important electrical and optical properties of the layers are presented. These include a reduction in free electron concentration, an increase in electron mobility, a reduction in both shallow donor and acceptor concentrations, and essentially no effect on the concentrations of electron traps.
The behavior of these optical and electrical properties with the addition of both silane and oxygen is also studied to provide additional information about the role of oxygen in the suppression of silicon incorporation during GaAs growth. Finally, some conclusions are drawn about the usefulness of this technique for certain technological applications.
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