X-Ray Generation by Mev Electrons in Silicon: Temperature, Tilt and Thickness Dependence

Kozlowski, Robert Edward

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Description

Title

X-Ray Generation by Mev Electrons in Silicon: Temperature, Tilt and Thickness Dependence

Author(s)

Kozlowski, Robert Edward

Issue Date

1982

Department of Study

Physics

Discipline

Physics

Degree Granting Institution

University of Illinois at Urbana-Champaign

Degree Name

Ph.D.

Degree Level

Dissertation

Keyword(s)

Physics, Atomic

Language

eng

Abstract

• When relativistic electrons strike a single crystal target, sharp peaks are observed in the x-ray spectrum generated. One type of radiation, called coherent bremsstrahlung, results from coherent electron scattering by atoms arranged on the crystal lattice. The other type of radiation is channeling radiation. The electrons channeling near major crystal axes enter quantized orbits and emit x-ray photons as a consequence of transitions between orbits.
• I describe my observations of channeling and coherent bremsstrahlung spectra using 2 to 3 MeV electrons incident on targets 1 and 3 (mu)m thick. Large changes in channeling x-ray energies and intensities are observed over a narrow range of temperature from room temperature to 200(DEGREES)C. There are no such large changes in the coherent bremsstrahlung spectra under the same conditions. Intensity measurements over a range of thicknesses for both types of radiation are reported. Finally, changes in the energy of the highest energy channeling peak are found as the channeling axis is tilted away from the electron beam.

Graduation Semester

1982

Type of Resource

text

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http://hdl.handle.net/2142/77346

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