A Comparative Study of Indium Arsenide/gallium Arsenide Short-Period Superlattice and Alloy Quantum Well Structures on Gallium Arsenide Substrates
Roan, Eel-Jye
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https://hdl.handle.net/2142/72005
Description
Title
A Comparative Study of Indium Arsenide/gallium Arsenide Short-Period Superlattice and Alloy Quantum Well Structures on Gallium Arsenide Substrates
Author(s)
Roan, Eel-Jye
Issue Date
1993
Doctoral Committee Chair(s)
Cheng, Keh-Yung
Department of Study
Electrical Engineering
Discipline
Electrical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Electronics and Electrical
Physics, Condensed Matter
Abstract
A comparison between (InAs)$\sb1$/(GaAs)$\sb1$ short-period-superlattice (SPS) and $\rm In\sb{0.5}Ga\sb{0.5}As$ alloy quantum-well structures grown on GaAs substrates has been made. Structural properties, photoluminescence properties, and thermal stability were investigated. A 1.265-$\mu$n photoluminescence peak wavelength was observed from a 36-A ((InAs)$\sb1$/(GaAs)$\sb1$SPS) /GaAs quantum-well structure at room temperature.
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