Transverse and Longitudinal Tunneling in Confined Heterostructures
Bigelow, Jeffrey Mark
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https://hdl.handle.net/2142/71996
Description
Title
Transverse and Longitudinal Tunneling in Confined Heterostructures
Author(s)
Bigelow, Jeffrey Mark
Issue Date
1993
Doctoral Committee Chair(s)
Leburton, J.P.,
Department of Study
Electrical Engineering
Discipline
Electrical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Electronics and Electrical
Abstract
In this thesis useful and powerful self-consistent Poisson-Schrodinger solvers are implemented to study novel low-dimensional tunneling effects and their application in confined heterostructures. In particular, three different three-terminal devices are studied which take advantage of the quantum-mechanical nature of electrons and holes to exhibit negative differential resistance (NDR) via tunneling.
A description of a new mechanism of resonant-tunneling real-space transfer is presented which is the source of instabilities and leads to abrupt NDRs in pseudomorphic MODFETs. The theory presented here is validated by experimental results. The current generated by two-dimensional interband tunneling in a bipolar-tunneling field-effect transistor (BiTFET) is calculated using a transfer-Hamiltonian formalism in conjunction with a self-consistent solver. The results demonstrate the potential applications of the BiTFET as a device with extremely abrupt multiple NDRs with high peak-to-valley ratios. Finally a novel numerical technique based on imaginary-time propagation in the split-operator scheme is implemented to solve the two-dimensional Schrodinger equation and successfully reproduce the one-dimensional resonant-tunneling current in a dual-gate FET.
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