Real-Space Transfer Transistors Grown by Metalorganic Chemical Vapor Deposition

Favaro, Michael Ernest

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https://hdl.handle.net/2142/71972 Copy

Description

Title

Real-Space Transfer Transistors Grown by Metalorganic Chemical Vapor Deposition

Author(s)

Favaro, Michael Ernest

Issue Date

1992

Doctoral Committee Chair(s)

Coleman, James J.

Department of Study

Electrical Engineering

Discipline

Electrical Engineering

Degree Granting Institution

University of Illinois at Urbana-Champaign

Degree Name

Ph.D.

Degree Level

Dissertation

Keyword(s)

Engineering, Electronics and Electrical

Abstract

• This thesis describes the fabrication and characterization of real-space transfer transistors which are grown by metalorganic chemical vapor deposition. In the negative-resistance field-effect transistor and the charge-injection transistor, the standard GaAs electron channel is replaced with a strained-layer ln$\sb{x}$Ga$\sb{1-x}$As electron channel. With increasing indium composition in the channel, the drain current peak-to-valley ratio, at room temperature, is increased from 1.7 in GaAs electron channel devices to over 1200 in ln$\sb{0.22}$Ga$\sb{0.78}$As electron channel devices.
• In addition, the real-space transfer of holes is reported. The real-space transfer of holes is used to demonstrate a p-channel negative-resistance field-effect transistor. A drain current peak-to-valley ratio of 1.6 at a temperature of 26K is measured.

Graduation Semester

1992

Type of Resource

text

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http://hdl.handle.net/2142/71972

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