High Performance Indium-Gallium-Arsenide / Indium-Aluminum-Arsenide Transistors Grown on Indium-Phosphide by Molecular Beam Epitaxy
Peng, Chin-Kun
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https://hdl.handle.net/2142/71858
Description
Title
High Performance Indium-Gallium-Arsenide / Indium-Aluminum-Arsenide Transistors Grown on Indium-Phosphide by Molecular Beam Epitaxy
Author(s)
Peng, Chin-Kun
Issue Date
1988
Department of Study
Metallurgy and Mining Engineering
Discipline
Metallurgical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Electronics and Electrical
Engineering, Materials Science
Abstract
Described in this thesis are the growth by molecular beam epitaxy (MBE) and characteristics of InGaAs/InAlAs transistors. Superior properties of the InGaAs/InAlAs system have attracted a great deal of interest in electronic and optical device applications for this material system, and spurred enormous activities in opto-electronic integration. This thesis details the performance of many device structures investigated with state-of-the-art results. Non-alloyed contact structures, with substantial impact in submicron and nanostructure applications are emphasized.
Fundamentals of MBE techniques are introduced first, along with discussions of x-ray diffraction and dislocations. A method for the self-consistent simulation of a heterojunction structure is discussed. This analysis provides quantitative data, which can then be compared with experimental results. The metal-semiconductor contact structure, in particular the non-alloyed ohmic contact, is detailed, along with the treatment of current conduction mechanisms, the associated analytical equations, and the transmission line method measurement. Device performance was explored using mainly three different structures. Our modulation doped field effect transistors exhibited the best microwave performance reported to-date for their size. Employing the contact structure in heterojunction bipolar transistors, the best dc current gains, in MBE grown devices, were demonstrated in devices with both non-alloyed and alloyed contacts, for both N-p-n and P-n-p configurations. Finally, the reduction of parasitic resistances in hot electron transistors was realized using the contact regrowth (CORE) technique. These results demonstrate the potential of the InGaAs/InAlAs system in realizing high performance devices, as well as the potential of non-alloyed contact structure and CORE technique for further improvement of device performance.
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