Thermodynamic and Kinetic Studies of (iii-V)(1-X)(iv(2))(x) Semiconducting Thin Films
Fang, Shushan
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https://hdl.handle.net/2142/71856
Description
Title
Thermodynamic and Kinetic Studies of (iii-V)(1-X)(iv(2))(x) Semiconducting Thin Films
Author(s)
Fang, Shushan
Issue Date
1988
Doctoral Committee Chair(s)
Greene, J.E.
Department of Study
Metallurgy and Mining Engineering
Discipline
Metallurgical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Materials Science
Abstract
A theory to calculate (III-V)$\sb{\rm 1-x}$(IV$\sb2$)$\sb{\rm x}$ pseudobinary phase diagrams was developed. Activities of zincblende-structure and diamond-structure (III-V)$\sb{\rm 1-x}$(IV$\sb2$)$\sb{\rm x}$ solid solutions were derived. Good agreements between experimental and theoretical results for GaAs-Ge, BaSb-Ge, and GaAs-Sn systems were obtained. A model was developed to predict zincblende to diamond phase transformation would occur at x$\sb{\rm c}$ = 0.26. Single-phase polycrystalline (GaAs)$\sb{\rm 1-x}$(Sn$\sb2$)$\sb{\rm x}$ films were grown by Rf-sputter deposition with x up to 0.06 for V$\sb{\rm s}$ (substrate bias) = 75 V, and up to 0.17 for V$\sb{\rm s}$ = 225 V. The reaction path of metastable (GaAs)$\sb{\rm 1-x}$(Sn$\sb2$)$\sb{\rm x}$ alloys followed the sequence: (1) metastable single phase, (2) GaAs rich and $\alpha$-Sn-rich phases, (3) $\alpha$-Sn transformed into $\beta$-Sn, and (4) $\beta$-Sn transformed into liquid. No single phase metastable (GaAs)$\sb{\rm 1-x}$(Sn$\sb2$)$\sb{\rm x}$ alloys were obtained by annealing amorphous ion-mixed GaAs/Sn multilayer films, and the reaction path followed the sequence: (1) amorphous, (2) mixtures of (GaAs)$\sb{\rm 1-x}$(Sn$\sb2$)$\sb{\rm x}$ alloys, GaAs, $\beta$-Sn, and $\alpha$-Sn, (3) $\alpha$-Sn transformed into $\beta$-Sn, and (4) $\beta$-Sn transformed into the liquid phase.
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