An in Situ Study of the Stresses in Silicide Thin Films
White, George Eugene
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https://hdl.handle.net/2142/71844
Description
Title
An in Situ Study of the Stresses in Silicide Thin Films
Author(s)
White, George Eugene
Issue Date
1987
Department of Study
Metallurgy and Mining Engineering
Discipline
Metallurgical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Materials Science
Abstract
A novel technique has been introduced to determine the film stress of metal silicon interfaced materials in-situ. This technique requires the use of a spatially wide yet highly collimated white beam of synchrotron radiation, and a properly chosen filter. The technique is properly termed Absorption Edge Contour (AEC) Mapping. With the aid of a real time imaging system it is possible to observe changes in stress of silicide materials during various stages of film fabrication, as well as assess the character of the silicon substrate. Also another novel technique utilizing conventional x-rays is presented which allows one to determine the growth kinetics of a silicide material in-situ.
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