X-Ray Diffraction Studies of Palladium-Silicide Thin Films
Coulman, Betty Ann
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Permalink
https://hdl.handle.net/2142/71815
Description
Title
X-Ray Diffraction Studies of Palladium-Silicide Thin Films
Author(s)
Coulman, Betty Ann
Issue Date
1985
Department of Study
Metallurgy and Mining Engineering
Discipline
Metallurgical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Date of Ingest
2014-12-16T20:51:59Z
Keyword(s)
Engineering, Materials Science
Abstract
The growth of Pd(,2)Si thin films from electron beam evaporated Pd films on Si(lll) substrates has been studied using X-ray diffraction techniques. In situ layer growth kinetics were measured over a temperature range of 160-222(DEGREES)C using an X-ray integrated intensity approach. Mosaic structure and impurity levels were analyzed. The film stresses in Pd(,2)Si layers grown at 250(DEGREES)C were determined for initial Pd thicknesses 50-750 (ANGSTROM).
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