Low Energy Ion Bombardment Effects in Supersaturated Copper-Indium Alloys
Rivaud, Lydia
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Permalink
https://hdl.handle.net/2142/71796
Description
Title
Low Energy Ion Bombardment Effects in Supersaturated Copper-Indium Alloys
Author(s)
Rivaud, Lydia
Issue Date
1982
Department of Study
Metallurgy and Mining Engineering
Discipline
Metallurgical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Physics, Radiation
Abstract
Scanning transmission electron microscopy and Auger electron spectroscopy were used to investigate the effects of low energy (200 - 3000 eV) Ar('+) ion bombardment of supersaturated Cu:In alloys. Ion bombardment always resulted in the preferential sputtering of In although for sample temperatures T(,s) (GREATERTHEQ) 250(DEGREES)C, In loss due to preferential sputtering was increasingly compensated by radiation-assisted surface segregation. Even at room temperature, however, the steady state In concentration in the altered layer during irradiation, while reduced, remained supersaturated and enhanced diffusion to ion bombardment-created point defect sinks resulted in the volume precipitation of randomly dispersed In-rich (delta) phase ((TURN) 30at%In) particles in the near-surface region. Thermally induced precipitates, on the other hand, nucleated only at grain boundaries and were only observed at T(,s) (GREATERTHEQ) 250(DEGREES)C. The average size and number density of radiation-induced precipitates increased with increasing ion bombardment energy E(,i). Upon termination of ion bombardment at T(,s) (GREATERTHEQ) 250(DEGREES)C, the In surface concentration always returned to (TURN) 30at%. The recovery time for this process decreased with increasing T(,s) and E(,i) due to fast diffusion through near-surface regions containing residual damage such as dislocation loops. The measured widths of the compositionally altered layers were on the order of the ion penetration range.
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