Mechanisms of Gallium-Arsenide Crystal Growth and Doping by Sputter Deposition: The Role of Ion-Surface Interactions
Barnett, Scott Alexander
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https://hdl.handle.net/2142/71793
Description
Title
Mechanisms of Gallium-Arsenide Crystal Growth and Doping by Sputter Deposition: The Role of Ion-Surface Interactions
Author(s)
Barnett, Scott Alexander
Issue Date
1982
Department of Study
Metallurgy and Mining Engineering
Discipline
Metallurgical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Materials Science
Abstract
GaAs films were grown on (100) GaAs substrates using a modified sputter deposition technique. Structural, chemical, and electrical analysis of the as-deposited films indicated that they were high quality, stoichiometric single crystals. Ion bombardment played an important and sometimes dominant role in determining GaAs film growth kinetics and physical properties by effecting elemental incorporation probabilities of residual impurities, constituent elements, and dopant impurities. Experimental results are interpreted and modeled based on ion-surface interaction effects, including trapping, sputtering, preferential sputtering, and collisional mixing.
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