Oxygen Transport in Vapor-Deposited Tin-Doped Indium Oxide Films (Diffusion, Electrochemical)
Enloe, Jack Harrison
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https://hdl.handle.net/2142/71705
Description
Title
Oxygen Transport in Vapor-Deposited Tin-Doped Indium Oxide Films (Diffusion, Electrochemical)
Author(s)
Enloe, Jack Harrison
Issue Date
1984
Department of Study
Ceramics Engineering
Discipline
Ceramics Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Chemical
Abstract
Dense, polycrystalline films of Sn-doped In(,2)O(,3) were vapor deposited on yttria-stabilized zirconia solid electrolytes. Oxygen transport through the films was monitored between 1100 and 1300(DEGREES)K near atmospheric oxygen pressures using electrochemical techniques. An attempt was made to correlate the transport data to a diffusion model based on the defect chemistry of In(,2)O(,3); however, the evidence suggests that oxygen transport through these cells is controlled by the film-electrolyte interface. Low temperature electronic properties of the films were measured using the van der Pauw technique and were correlated to the tin content in the films. Finally, thermogravimetric and x-ray lattice parameter measurements were made on Sn-doped In(,2)O(,3) powder to provide additional support for the defect model.
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