The Effect of Pressure on The Height of The Schottky Barrier for Several Semiconductors (Diodes, Metal-Contacts)
Peanasky, Michael John
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https://hdl.handle.net/2142/69757
Description
Title
The Effect of Pressure on The Height of The Schottky Barrier for Several Semiconductors (Diodes, Metal-Contacts)
Author(s)
Peanasky, Michael John
Issue Date
1985
Department of Study
Chemical Engineering
Discipline
Chemical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Physics, Condensed Matter
Abstract
This thesis contains the first measurements of the effect of pressure (to (TURN)10 kilobars) on the schottky barrier height at the metal-semiconductor interface. Results are presented for CdS, CdSe, and ZnO together with measurements of the absorption edges for CdSe and ZnO. These results are used in conjunction with previously published flatband potential measurements on GaAs and InP to relate the change in energy of the top of the valence band relative to the fermi level of the metal to the ionicity of the semiconductor. These measurements are compared to correlations of the change of the barrier height with the work function of the metal which have previously appeared in the literature.
The barrier height is independent of the work function of the metal for covalent materials but changes identically with the work function of the metal for ionic materials. The pressure measurements show that there is no change in the valence band energy for covalent materials and increasing movement of the valence band energy with increasing ionicity of the semiconductor. Therefore, the results not only show direct physical evidence for the transition between covalent and ionic materials in terms of the behavior of the band energy with pressure, but also that the barrier height is determined in large part by the valence band of the semiconductor.
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