Quasi-Newton and Multigrid Methods for Semiconductor Device Simulation
Slamet, Sumantri
This item is only available for download by members of the University of Illinois community. Students, faculty, and staff at the U of I may log in with your NetID and password to view the item. If you are trying to access an Illinois-restricted dissertation or thesis, you can request a copy through your library's Inter-Library Loan office or purchase a copy directly from ProQuest.
Permalink
https://hdl.handle.net/2142/69522
Description
Title
Quasi-Newton and Multigrid Methods for Semiconductor Device Simulation
Author(s)
Slamet, Sumantri
Issue Date
1984
Department of Study
Computer Science
Discipline
Computer Science
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Computer Science
Abstract
A finite difference approximation to the semiconductor device equations using the Bernoulli function approximation to the exponential function is described, and the robustness of this approximation is demonstrated. Sheikh's convergence analysis of Gummel's method and quasi-Newton methods is extended to a nonuniform mesh and the Bernoulli function discretization. It is proved that Gummel's method and the quasi-Newton methods for the scaled carrier densities and carrier densities converge locally for sufficiently smooth problems.
A new numerical method for semiconductor device simulation is also presented. The device is covered with a relatively coarse nonuniform grid, and Newton's method is applied globally over the entire grid and locally over critical rectangular grid subsets where the residual is large until a solution of moderate accuracy is obtained. Rectangular subgrids of the critical subgrids are then refined by mesh-halving into coextensive sets of grids, and an accurate solution is obtained on the finest subgrids by applying the multigrid method directly to the corresponding sets of nonlinear difference equations. The method is fast because the Newton iteration is applied mainly to small critical regions of the device and the multigrid method significantly reduces the time required to obtain an accurate solution on the finest grids in these regions. The method is applied to a short-channel MOSFET and is shown to compare favorably with conventional methods.
Use this login method if you
don't
have an
@illinois.edu
email address.
(Oops, I do have one)
IDEALS migrated to a new platform on June 23, 2022. If you created
your account prior to this date, you will have to reset your password
using the forgot-password link below.
