Residual Impurity Incorporation in the Growth of High Purity Gallium-Arsenide by Metalorganic Chemical Vapor Deposition
Reed, Andrew Dean
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https://hdl.handle.net/2142/69420
Description
Title
Residual Impurity Incorporation in the Growth of High Purity Gallium-Arsenide by Metalorganic Chemical Vapor Deposition
Author(s)
Reed, Andrew Dean
Issue Date
1988
Doctoral Committee Chair(s)
Stillman, Gregory E.
Department of Study
Electrical Engineering
Discipline
Electrical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Electronics and Electrical
Abstract
Although low compensation, undoped n-type GaAs is needed for many device applications, residual impurities limit the purity of metalorganic chemical vapor deposition grown material. Novel experimental techniques were developed and used to identify the sources and incorporation mechanisms of germanium, the dominant residual donor, and carbon, the dominant residual acceptor.
L-optimal and D-optimal statistically designed experiments were used to determine the influence of 14 growth parameters on the donor and acceptor concentrations and the 77 K mobility of MOCVD grown GaAs. The source of the germanium impurity was found to be in the AsH$\sb3$ and it incorporates via a simple mechanism; the germanium donor concentration is directly proportional to the AsH$\sb3$ partial pressure and inversely proportional to the TMGa partial pressure. The source of the carbon impurity was found to be the TMGa molecule. There is a complex incorporation mechanism involving the loss of the first methyl radical from gas phase TMGa and the loss of the first hydrogen atom from AsH$\sb3$ adsorbed on the substrate surface.
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