Predictable Reactive Ion Etching of Gallium-Arsenide and Aluminum - Gallium-Arsenide in Hydrogen-Chloride/argon Radio Frequency Discharges
Nordheden, Karen Jean
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https://hdl.handle.net/2142/69417
Description
Title
Predictable Reactive Ion Etching of Gallium-Arsenide and Aluminum - Gallium-Arsenide in Hydrogen-Chloride/argon Radio Frequency Discharges
Author(s)
Nordheden, Karen Jean
Issue Date
1988
Department of Study
Electrical Engineering
Discipline
Electrical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Electronics and Electrical
Abstract
The reactive ion etch rate of GaAs in HCl/Ar discharges has been studied as a function of RF power, gas mixture, and applied bias. The bias voltage, defined as the difference between the substrate and the time averaged plasma floating potentials, was found to best predict the etch rate. The etch rate of AlGaAs was equivalent to that of GaAs. Optical emission, electron density, and probe measurements were conducted and related to the etch rate results.
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