Analysis of the Indium Gallium Arsenide/aluminum Gallium Arsenide Modulation-Doped Field Effect Transistor
Henderson, Timothy Scott
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https://hdl.handle.net/2142/69411
Description
Title
Analysis of the Indium Gallium Arsenide/aluminum Gallium Arsenide Modulation-Doped Field Effect Transistor
Author(s)
Henderson, Timothy Scott
Issue Date
1988
Department of Study
Electrical Engineering
Discipline
Electrical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Electronics and Electrical
Abstract
Described in this thesis are the growth and characterization of (In,Ga)As/(Al,Ga)As modulation-doped field-effect transistors (MODFETs). The use of a thin strained layer of (In,Ga)As for the current-carrying channel takes advantage of the superior transport properties of this material while maintaining high crystal quality necessary for good device performance. Further, because of the small bandgap of the (In,Ga)As layer, the need for a high AlAs mole fraction layer as in the GaAs/(Al,Ga)As MODFET is eliminated. The use of a low AlAs mole fraction layer allows for superior device performance at cryogenic temperatures.
A growth technique using molecular beam epitaxy is described, with particular attention paid to the growth and optimization of the (In,Ga)As channel layer. Sheet carrier concentration, low- and midelectric field mobility and velocity-field characteristics, as well as electron saturation velocity, are determined as functions of various structural parameters, particularly InAs mole fraction. Photoreflectance measurements and theoretical calculations are used to describe the band structure in the (In,Ga)As quantum well. Finally, outstanding dc and microwave performances are demonstrated at room and cryogenic temperatures. These results indicate that the (In,Ga)As/(Al,Ga)As MODFET is a superior alternative to the GaAs metal-semiconductor field-effect transistor and GaAs/(Al,Ga)As MODFET for use as a high frequency, low noise amplifier and switch.
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