Hydrogenation of High Purity Gallium-Arsenide and Liquid Phase Epitaxy Growth of High Purity Indium-Gallium-Arsenide
Pan, Noren
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https://hdl.handle.net/2142/69402
Description
Title
Hydrogenation of High Purity Gallium-Arsenide and Liquid Phase Epitaxy Growth of High Purity Indium-Gallium-Arsenide
Author(s)
Pan, Noren
Issue Date
1988
Department of Study
Electrical Engineering
Discipline
Electrical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Electronics and Electrical
Engineering, Materials Science
Abstract
There has been a significant interest in the hydrogenation of GaAs because it is found to passivate a variety of deep and shallow impurities. In this study, the concentration of donors and acceptors in high purity n- and p-type GaAs before and after hydrogenation has been investigated by photo-thermal ionization spectroscopy, low temperature photoluminescence, capacitance-voltage and Hall-effect measurements. The concentration of deep levels in these samples was determined by constant capacitance deep level transient spectroscopy. After hydrogenation, the concentration of Si donors in n-type GaAs and the concentration of C acceptors in both n- and p-type GaAs show a significant decrease. An increase in the mobility is observed for the hydrogenated n-type GaAs samples. However, the hydrogenated p-type samples are highly resistive and reliable Hall-effect measurements cannot be obtained. A large reduction in the trap concentration in the hydrogenated samples is observed.
Since hydrogenation of p-type GaAs results in highly resistive material without introducing additional defects or impurities, it is also used to provide isolation regions in a stripe geometry quantum well laser.
The ternary InGaAs lattice matched to InP has numerous applications in optoelectronics and microwave devices. The ability to carefully control the growth conditions and the purity of the layer is of primary importance in device applications. The application of first-order diffusion limited theory along with the experimental growth rates of InGaAs have permitted the determination of the diffusion coefficients of the various species in the growth solution, which provides a better understanding of the growth rates of the ternary InGaAs. In addition, the quality of source material was found to have a significant effect on the purity of the InGaAs. High purity InGaAs epitaxial layers can be routinely obtained by selecting the indium batch containing the lowest silicon content.
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