Metalorganic Chemical Vapor Deposition and Its Application to the Growth of the Heterostructure Hot Electron Diode
Emanuel, Mark Andrew
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https://hdl.handle.net/2142/69396
Description
Title
Metalorganic Chemical Vapor Deposition and Its Application to the Growth of the Heterostructure Hot Electron Diode
Author(s)
Emanuel, Mark Andrew
Issue Date
1988
Doctoral Committee Chair(s)
Coleman, James,
Department of Study
Electrical Engineering
Discipline
Electrical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Electronics and Electrical
Abstract
Metalorganic chemical vapor deposition (MOCVD) is an epitaxial crystal growth technique capable of producing high-quality compound semiconductors in thick or thin layers with abrupt junctions, excellent area uniformity, and precisely controlled thickness, doping and composition. In this work the desired characteristics of an MOCVD system are described, and design criteria necessary for their implementation are identified. Special emphasis is placed on defensive design strategies intended to limit the extent of system perturbation due to various component failure modes and normal maintenance procedures. The design of reactor computer control software is also considered, and algorithms for the growth of layers graded in both doping and composition are presented.
Theory and experimental data are presented for the heterostructure hot electron diode (H$\sp2$ED), a new two-terminal electronic device that exhibits 2-shaped negative differential resistance (NDR) in the dc IV characteristic. The proposed switching mechanism in this device is an abrupt transition in conduction mode from high resistance tunneling to lower resistance thermionic emission over a heterobarrier. Design criteria and MOCVD crystal growth considerations are presented for implementation of the H$\sp2$ED in the gallium arsenide-aluminum gallium arsenide material system. It is found that the device is extremely sensitive to the background carrier concentration in the aluminum gallium arsenide barrier, with an extremely resistive barrier layer necessary for devices to exhibit NDR. Data are presented showing that the H$\sp2$ED is capable of free oscillation at frequencies of at least 5 GHz, and of amplification to at least 17 GHz.
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