An Experimental Study of Impact Ionization in Compound Semiconductors
Robbins, Virginia MacKay
This item is only available for download by members of the University of Illinois community. Students, faculty, and staff at the U of I may log in with your NetID and password to view the item. If you are trying to access an Illinois-restricted dissertation or thesis, you can request a copy through your library's Inter-Library Loan office or purchase a copy directly from ProQuest.
Permalink
https://hdl.handle.net/2142/69388
Description
Title
An Experimental Study of Impact Ionization in Compound Semiconductors
Author(s)
Robbins, Virginia MacKay
Issue Date
1988
Doctoral Committee Chair(s)
Stillman, Gregory E.
Department of Study
Electrical Engineering
Discipline
Electrical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Date of Ingest
2014-12-15T19:05:31Z
Keyword(s)
Engineering, Electronics and Electrical
Abstract
Impact ionization coefficients are important parameters for the understanding of high field transport in semiconductors. Previous experimental data on impact ionization coefficients have indicated that the bandstructure can have a strong influence on the impact ionization process. In this thesis, the effects of crystallographic orientation, composition and temperature on impact ionization are reported for measurements done on InP, Al$\sb{\rm x}$Ga$\sb{\rm1-x}$As and GaAs, respectively.
Photomultiplication measurements were performed on avalanche photodiodes fabricated in (111) InP. The ionization coefficients determined from these measurements are essentially the same as the ionization coefficients previously determined for (100) InP. There is no significant difference between the ratio of the ionization coefficients for the two directions over the range of electric fields observed.
Photomultiplication measurements were also made on avalanche photodiodes in Al$\sb{\rm x}$Ga$\sb{\rm 1-x}$As for x = 0.1 to x = 0.4. The magnitudes of the ionization coefficients decrease with increasing x, corresponding to an increase in the threshold energy with increasing bandgap. No significant change in the ratio of the electron to hole ionization coefficients is observed with changing composition.
The temperature dependence of the ionization coefficients in (100) GaAs was determined by photomultiplication measurements on avalanche photodiodes. The measurements were performed from 80 K to 500 K. The ionization coefficients decrease with increasing temperature, but no significant change in the ratio of the electron to hole ionization coefficients is observed over the range of temperature and electric fields studied.
Use this login method if you
don't
have an
@illinois.edu
email address.
(Oops, I do have one)
IDEALS migrated to a new platform on June 23, 2022. If you created
your account prior to this date, you will have to reset your password
using the forgot-password link below.
