Electronic Trapping Properties of Gold Center in Silicon
Su, Lu
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https://hdl.handle.net/2142/69377
Description
Title
Electronic Trapping Properties of Gold Center in Silicon
Author(s)
Su, Lu
Issue Date
1987
Department of Study
Electrical Engineering
Discipline
Electrical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Electronics and Electrical
Abstract
Gold in silicon is studied in this thesis because of its usefulness as a recombination center as well as the controversy over the published works regarding its property as a deep level in silicon. Two major questions about the use of gold as a deep trap in silicon are (i) What are their location and configuration in the silicon crystal--substitutional, interstitial, or complex? (ii) Do the two gold levels belong to the same gold center in silicon? To have better insight, we studied the trapping rates of the gold center in both low and medium concentration substrates.
The junction capacitance transient technique is used to study the gold center in silicon. The fundamental theory and basic variations of the measurement technique were reviewed, and their limitations and remedies were discussed. The techniques of profiling trap concentration were also reported.
The result of this work shows that the thermal electron emission and capture rates of the gold acceptor level in both low and medium concentration substrates are nearly the same. The near equality of the capture cross sections in different concentration substrates suggests that the gold acceptor level is not from a gold-phosphorus complex as suggested by Lang and coworkers (81). The temperature independence of the cross sections supports the belief that the gold acceptor level is a neutral center.
The effect of the guard ring voltage on the measured hole emission rate of the gold donor level was studied. A poorly designed experiment may give erroneous results due to a large capacitance signal from surface traps. We have also studied the electric field dependence of the hole emission rate and found that there is no field dependence for fields below 2 $\times$ 10$\sp4$ V/cm.
The hole thermal emission rate at the gold donor level is independent of both the boron concentration and substrate type (Czochralski and float-zone). The measured hole capture cross sections were also close to the published works. The temperature independence of these cross sections supports the idea that the gold donor level comes from a neutral gold center for hole capture.
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