Generation-Annealing of Interface Traps and Hydrogenation of Boron Acceptors in Metal-Oxide-Silicon Capacitors Irradiated by Kilo-Volt Electrons
Lin, Wallace Wan-Li
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https://hdl.handle.net/2142/69376
Description
Title
Generation-Annealing of Interface Traps and Hydrogenation of Boron Acceptors in Metal-Oxide-Silicon Capacitors Irradiated by Kilo-Volt Electrons
Author(s)
Lin, Wallace Wan-Li
Issue Date
1987
Department of Study
Electrical Engineering
Discipline
Electrical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Electronics and Electrical
Abstract
Generation and annealing of interface traps and deactivation of boron acceptors in silicon are investigated in Al/SiO$\sb2$/Si capacitors exposed to 8 keV electrons. Post-oxidation conditions are varied. Interface and oxide traps are separated using a repeated stress-anneal technique with the time-dependent high-frequency capacitance-voltage measurements.
Two interface trap species were detected in all capacitors. Boron hydrogenation proceeds rapidly during irradiation but continues for many hours after the 8 keV electron beam is removed. Higher trap generation rate, trap density and boron deactivation percentage were observed during irradiation in the oxide subjected to DI water rinse, no post-oxidation anneal (in Argon), or no post-metallization anneal (in forming gas). Results suggest that the two traps are due to intrinsic dangling bonds initially hydrogenated (Si-H or O-H) or strained (Si-O). The hydrogen bond model is further supported by a one-to-one experimental correlation between the annealing or hydrogenation of the interface traps and the hydrogenation of the boron acceptors.
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