Growth and Characterization of Molecular Beam Epitaxial Gallium-Arsenide Antimonide and Gallium-Arsenide Antimonide/gallium-Arsenide Superlattices
Klem, John Frederick
This item is only available for download by members of the University of Illinois community. Students, faculty, and staff at the U of I may log in with your NetID and password to view the item. If you are trying to access an Illinois-restricted dissertation or thesis, you can request a copy through your library's Inter-Library Loan office or purchase a copy directly from ProQuest.
Permalink
https://hdl.handle.net/2142/69375
Description
Title
Growth and Characterization of Molecular Beam Epitaxial Gallium-Arsenide Antimonide and Gallium-Arsenide Antimonide/gallium-Arsenide Superlattices
Author(s)
Klem, John Frederick
Issue Date
1987
Department of Study
Electrical Engineering
Discipline
Electrical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Electronics and Electrical
Abstract
Described in this thesis are the molecular beam epitaxial growth and characterization of GaAs$\sb{\rm 1-x}$Sb$\sb{\rm x}$ films and GaAs$\sb{\rm 1-x}$Sb$\sb{\rm x}$/GaAs strained layer superlattices. The methods used to reproducibly grow GaAs$\sb{\rm 1-x}$Sb$\sb{\rm x}$ across its entire composition range are detailed. The resulting film surface morphologies and microstructures are investigated by optical and electron microscopy. Significant atomic clustering and ordering effects are observed in alloys of metastable composition. Optical characterization of these alloys shows that good quality material can be obtained, but that the major limitation to the quality of these materials is related to the film microstructure. Electrical measurements on unintentionally-doped layers reveal p-type conductivity due to two distinct acceptor levels. Hole mobilities are qualitatively explained in a model that assumes a dominant alloy scattering mechanism.
Strained layer GaAs$\sb{\rm 1-x}$Sb$\sb{\rm x}$/GaAs superlattices are characterized by x-ray diffraction, photoluminescence, photoreflectance, and optical absorption. Structural parameters derived from a kinematical x-ray diffraction model are used in conjunction with the results of optical characterization and an envelope function approximation bandstructure model to estimate the GaAs/GaSb band alignment. These results indicate that the superlattices are Type II.
Use this login method if you
don't
have an
@illinois.edu
email address.
(Oops, I do have one)
IDEALS migrated to a new platform on June 23, 2022. If you created
your account prior to this date, you will have to reset your password
using the forgot-password link below.
