Effects of Depth Variation of Substrate Dopant Impurity Concentration on the Interface Trap Density Determination in Mos Devices (Semiconductor)
Pan, Cheng-Sheng
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https://hdl.handle.net/2142/69346
Description
Title
Effects of Depth Variation of Substrate Dopant Impurity Concentration on the Interface Trap Density Determination in Mos Devices (Semiconductor)
Author(s)
Pan, Cheng-Sheng
Issue Date
1986
Department of Study
Electrical Engineering
Discipline
Electrical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Electronics and Electrical
Abstract
The effect of dopant impurity concentration variation with depth on the interface trap density determination using the high-frequency capacitance-voltage (HFCV) or Terman method with a constant dopant concentration assumption has been quantitatively studied. A systematic correction scheme for nonconstant dopant concentration has been designed. Even if the substrate dopant concentration is not available, this correction scheme can still provide an estimation of the error in the interface trap density due to the nonconstant dopant concentration profile.
The circuit technique for semiconductor analysis (CTSA) is employed to calculate ideal HFCV curves used in the Terman method. Theoretical error in the small-signal equivalent circuits for semiconductors due to the finite lump size has been analyzed. The discretization error of semiconductor capacitance in one single lump is found to be proportional to the cube of the lump size divided by the Debye length. The accumulated error in the flat-band semiconductor capacitance is proportional to the square to the lump size divided by the Debye length. It is shown that the lump size must be less than the Debye length to maintain accuracy in the small-signal equivalent circuit. Based on these results, a size selection rule of the discretization lump is proposed, which can consistently generate a grid system under a user prescribed accuracy requirement.
The new analysis has been applied to estimate the errors in the interface and oxide trap densities generated during the avalanche electron injection stress of MOS capacitors. The results indicate that the errors caused by the nonuniform hydrogenated acceptor (boron) doping profile in the peaked donorlike interface trap density at 0.25 eV above midgap and in the turnaround of midgap voltage shift are very small.
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