An Investigation of Gallium-Arsenide Materials and Devices Grown on Silicon Substrates (Molecular Beam Epitaxy, Heteroepitaxy)
Fischer, Russell Jon
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https://hdl.handle.net/2142/69342
Description
Title
An Investigation of Gallium-Arsenide Materials and Devices Grown on Silicon Substrates (Molecular Beam Epitaxy, Heteroepitaxy)
Author(s)
Fischer, Russell Jon
Issue Date
1986
Department of Study
Electrical Engineering
Discipline
Electrical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Electronics and Electrical
Abstract
This thesis describes the growth and characterization of GaAs based electronic devices on Si substrates. The use of Si as a substrate for growth of GaAs and related III-V compounds has many attractive features, including low cost, high mechanical strength, and higher thermal conductivity. This technology would also enable high speed GaAs based devices to be monolithically integrated with Si, thus creating many new possibilities. In this work the possibility of growing device quality GaAs on Si is demonstrated through fabrication of devices on this material. It is not only in majority carrier devices that excellent performance has been obtained but also in minority carrier devices which are much more sensitive to defects. In heterojunction bipolar transistors on Si, current gain cutoff frequencies which are comparable to the best reported values on GaAs substrates were obtained. Room temperature pulsed laser operation is also demonstrated for GaAs on Si.
Aside from the device properties, the materials properties have also been investigated. Misfit dislocation densities in the 10('4)cm('-2) range at the top of 2 (mu)m thick layers have been measured by transmission electron microscopy (TEM). Suppression of antiphase domains by recently developed growth techniques is also demonstrated by X-ray measurements, anisotropic chemical etching, and TEM.
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