Wavelength Modification by Thermal Annealing and Stripe Geometry Definition by Impurity-Induced Disordering in Quantum-Well Laser Diodes (Diffusion, Gallium-Arsenide, Iii-v Semiconductors)

Meehan, Kathleen

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Description

Title

Wavelength Modification by Thermal Annealing and Stripe Geometry Definition by Impurity-Induced Disordering in Quantum-Well Laser Diodes (Diffusion, Gallium-Arsenide, Iii-v Semiconductors)

Author(s)

Meehan, Kathleen

Issue Date

1985

Department of Study

Electrical Engineering

Discipline

Electrical Engineering

Degree Granting Institution

University of Illinois at Urbana-Champaign

Degree Name

Ph.D.

Degree Level

Dissertation

Keyword(s)

Engineering, Electronics and Electrical

Abstract

• The effects of thermal annealing ((TURN)900(DEGREES)C) on quantum-well laser diode properties are investigated. The shift to higher energies caused by inter-diffusion of Al and Ga at the quantum-well interfaces in modeled by a modified Poschl-Teller potential. The interdiffusion coefficient D(Al-Ga) is found to be on the order of 1 x 10('-18) cm('2)/s at 900(DEGREES)C.
• Diffusion of Zn or Si has been found to cause interdiffusion of both of the Column III constituents (Al and Ga) and possibly both of the Column V constituents (P and As). This behavior, which yields layer disordering, occurs at lower temperatures than the temperature required for ordinary thermal disordering. With proper masking techniques, the layer intermixing (i.e., Al-Ga interdiffusion in Al(,x)Ga(,1-x)As-GaAs quantum-well heterostructures) can be accomplished selectively, thus raising the effective band gap of the diffused region. This process has been successfully used to define stripe-geometry buried heterostructure laser diodes.

Graduation Semester

1985

Type of Resource

text

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