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The generation-recombination-trapping centers formed by the heat treatment of boron implanted, phosphorus doped silicon were studied using capacitance transient techniques. Measurements were made of the carrier thermal emission rates, emission cross sections, and activation energies for two thermally generated hole traps and six thermally generated electron traps. These traps do not appear to be present in the silicon immediately after implantation; they are formed by heat treatment of the damaged silicon at temperatures near 400C.
The concentrations of the two hole traps and four of the electron traps were measured as functions of distance from the silicon surface. The concentration profiles were found to peak significantly shallower than the boron projected range. From the position of the concentration peak it was concluded that formation of these traps is dominated by vacancies left behind when the recoil atoms move farther into the silicon during implantation.
The annealing kinetics of three of the electron traps were investigated by measuring the trap concentration profiles as functions of annealing time and temperature.
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