Low Temperature Photoluminescence Characterization of High Purity Gallium-Arsenide and Indium-Phosphide (Residual Impurities, Epitaxy)
Skromme, Brian John
This item is only available for download by members of the University of Illinois community. Students, faculty, and staff at the U of I may log in with your NetID and password to view the item. If you are trying to access an Illinois-restricted dissertation or thesis, you can request a copy through your library's Inter-Library Loan office or purchase a copy directly from ProQuest.
Permalink
https://hdl.handle.net/2142/69304
Description
Title
Low Temperature Photoluminescence Characterization of High Purity Gallium-Arsenide and Indium-Phosphide (Residual Impurities, Epitaxy)
Author(s)
Skromme, Brian John
Issue Date
1985
Department of Study
Electrical Engineering
Discipline
Electrical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Electronics and Electrical
Abstract
The analysis of low temperature photoluminescence (PL) spectra can be divided into three parts. First, the recombination processes responsible for each of the observed spectral peaks must be determined; second, the defects and impurities which participate in those processes must be identified; and finally, that information can be applied to study the incorporation of residual impurities and defects in various types of material. New results in each of these areas are presented for GaAs and InP.
Recombination processes are identified both in the case of excited-state donor-to-acceptor recombination in GaAs and InP, which is modeled theoretically and compared to experiment, and in the case of defect-related peaks in the spectrum of molecular beam epitaxial (MBE) GaAs, which are found to involve both donor-to-acceptor and band-to-acceptor recombination. Ion implantations of C, Be, Mg, and Si into InP are used to identify the corresponding acceptor levels in that material.
The residual acceptors characteristic of GaAs grown by liquid-phase epitaxy (LPE), AsCl(,3)-vapor-phase epitaxy (VPE), AsH(,3)-VPE, metalorganic chemical vapor deposition (MOCVD), and MBE and determined using PL measurements on over 230 samples grown in 35 different laboratories. The results are compared to photothermal ionization data which indicate the residual donor species in the same samples; the behavior of amphoteric column IV impurities is thus determined for each of the growth techniques.
The effect of growth conditions on impurity incorporation in GaAs is studied spectroscopically in several cases, such as the influence of the AsCl(,3) "mole fraction" in AsCl(,3)-VPE and the AsH(,3) mole fraction in AsH(,3)-VPE; source baking in AsH(,3)-VPE; As/Ga ratio, growth temperature, and source purity in MOCVD; and As/Ga ratio, and type and purity of the As source in MBE. The origin of many of the residual impurities characteristic of various growth techniques is inferred from these studies.
Finally, the characteristic residual acceptors in InP produced by bulk synthesis, LPE, and PH(,3)-VPE are identified.
Use this login method if you
don't
have an
@illinois.edu
email address.
(Oops, I do have one)
IDEALS migrated to a new platform on June 23, 2022. If you created
your account prior to this date, you will have to reset your password
using the forgot-password link below.
