Automated Variable Temperature Hall Effect Measurements and Analysis of N-Type Gallium-Arsenide, Indium-Phosphide and Their Lattice Matched Alloy Semiconductors (Hall Effect)
Lepkowski, Thomas Richard
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https://hdl.handle.net/2142/69301
Description
Title
Automated Variable Temperature Hall Effect Measurements and Analysis of N-Type Gallium-Arsenide, Indium-Phosphide and Their Lattice Matched Alloy Semiconductors (Hall Effect)
Author(s)
Lepkowski, Thomas Richard
Issue Date
1985
Department of Study
Electrical Engineering
Discipline
Electrical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Physics, Electricity and Magnetism
Abstract
A thorough background to the theoretical analysis of Hall effect carrier concentrations and mobilities in n-type GaAs, InP, and their related direct gap semiconductor alloys is presented along with a thorough treatment of those factors affecting the measurement. The design and construction of the equipment used to make measurements from 4.2 K to 373 K are described. The programming required both for the control of the measurements and the analysis of the data is discussed in detail. Results are presented for high purity n-type GaAs, InP and In(,0.53)Ga(,0.47)As.
It was found that both the concentration and mobility may be accurately measured with the described system and both may be consistently and accurately modeled in some GaAs and InP samples. Because of possible inhomogeneity, other GaAs, InP and InGaAs samples cannot be accurately modeled even if such effects as deep donors, multiply charged acceptors, and depletion or accumulation of the surface or interface are included.
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