Indium-Gallium - Phosphide-Arsenide Quantum-Well Heterostructure Lasers Grown on Gallium-Arsenide Substrate by Liquid Phase Epitaxy (Miscibility)
Fuller, Brian Keith
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https://hdl.handle.net/2142/69289
Description
Title
Indium-Gallium - Phosphide-Arsenide Quantum-Well Heterostructure Lasers Grown on Gallium-Arsenide Substrate by Liquid Phase Epitaxy (Miscibility)
Author(s)
Fuller, Brian Keith
Issue Date
1984
Department of Study
Electrical Engineering
Discipline
Electrical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Electronics and Electrical
Abstract
Light emitting In(,1-x)Ga(,x)P(,1-z)As(,z)-In(,1-x')Ga(,x')P(,1-z')As(,z')quantum-well heterostructure platelet lasers grown on (100) GaAs substrate that are capable of operating continuously at room temperature (cw, 300 K) at a wavelength of 7700 (ANGSTROM), but with a limited operating life, as described. The shortest wavelength obtained in this study is 6600 (ANGSTROM) at 77 K. This is achieved by bandfilling of a quantum-well sample having a well thickness of (TURN) 200 (ANGSTROM). The liquid phase epitaxial (LPE) growth method, including a computer controlled stepping motor that is used for this work, is discussed.
Growth of In(,1-x)Ga(,x)P(,1-z)As(,z) at 767(DEGREES)C in the energy-gap range of 1.7 to 1.82 eV was difficult from melts having a supersaturation less than 20(DEGREES)C. This is believed to be due to a miscibility gap that exists for the InGaPAs alloy to these low crystal growth temperatures. The spontaneous emission spectrum of 1.82 eV bulk layer (in the immiscible region) exhibits two peaks, indicating crystal inhomogeneity. The immiscible region decreases in size with increasing growth temperature.
The more complicated alloy AlInGaPAs grown on a GaAs substrate by LPE is mentioned. Luminescence at 1.93 eV is shown for this layer, which was only partially studied.
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