Wavelength Modified and Strained-Layer Quantum-Well Heterostructure and Superlattice Lasers (aluminum-Gallium - Arsenide)
Camras, Michael David
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https://hdl.handle.net/2142/69263
Description
Title
Wavelength Modified and Strained-Layer Quantum-Well Heterostructure and Superlattice Lasers (aluminum-Gallium - Arsenide)
Author(s)
Camras, Michael David
Issue Date
1984
Department of Study
Electrical Engineering
Discipline
Electrical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Materials Science
Abstract
The effects of wavelength modification and strained layers on quantum-well heterostructure (QWH) and superlattice (SL) lasers grown by metalorganic chemical vapor deposition (MOCVD) are investigated. Size quantization, high pressure, and thermal annealing are the methods used to alter the output energy of these lasers. Stimulated emission in strained-layer QWH's and SL's is demonstrated, and the form of their failure is examined.
Size quantization is used to increase the energy of the carriers in the (GAMMA), L, and X bands of a QWH. The Kronig-Penney model is used to predict the high energy limit of laser operation of QWH's in the AlGaAs system. High energy laser operation from various AlGaAs QWH's is demonstrated.
High pressure shifts the energy of the (GAMMA), L, and X bands. Photopumped laser operation of a QWH subjected to high pressure (0-11 kbar) is examined.
Thermal annealing at high temperatures (875-1000(DEGREES)C) has been used to change the band edge profile of QWH's and the energy of the laser output. The energy levels of the annealed quantum-well crystal are approximated by fitting a modified Poschl-Teller potential to the band-edge profile as modified by layer (Al-Ga) interdiffusion.
Stimulated emission data are also presented on a large variety of QWH's and SL's. These structures consist of barrier-well combinations of thickness <(, )150 (ANGSTROM) made of GaAs-InGaAs, GaAsP-GaAs, and GaAsP-InGaAs. All of these heterostructures are grown on a GaAs substrate with and, in some cases, without a graded layer. The strain range between 0.2 x 10('-3) and 12.5 x 10('-3) is examined.
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