Swept Line Electron Beam Annealing of Ion-Implanted Semiconductors
Soda, Kenneth James
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https://hdl.handle.net/2142/69245
Description
Title
Swept Line Electron Beam Annealing of Ion-Implanted Semiconductors
Author(s)
Soda, Kenneth James
Issue Date
1982
Department of Study
Electrical Engineering
Discipline
Electrical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Electronics and Electrical
Abstract
The capabilities of a Swept Line Electron Beam (SLEB) in annealing ion-implanted semiconductors are examined. This technique employs a fixed geometry, line-shaped electron beam through which implanted samples are mechanically scanned. In general, this technique can produce annealing results comparable or superior to those achievable by conventional furnace annealing.
Residual point defects in self-implanted amorphous silicon treated by SLEB and furnace processes are examined by Deep Level Transient Spectroscopy. Despite high temperature treatment, furnace annealed samples show large (10('16) cm('-3)) defect concentrations and dopant migration phenomena. This is especially true in the as-implanted amorphous-crystalline transition region. When proper annealing parameters are used, SLEB annealed material shows much reduced point defect concentrations and reduced dopant motion. These relatively thick amorphous layers (0.5 (mu)m) are regrown and annealed by SLEB without the use of additional furnace treatment.
Similar studies of BF(,2)('+) implanted silicon are also presented. Differential resistivity/Hall effect and Secondary Ion Mass Spectrometry analysis are used to show improved electrical activation and only limited dopant motion during SLEB annealing as compared with furnace annealing. The improved electrical activity is especially significant in the original amorphous-crystalline transition region where reduced residual defect densities are observed.
SLEB annealing effectiveness in both direct and indirect band gap composition GaAs(,1-x)P(,x) is also investigated. Photoluminescence emission from nitrogen implanted, beam annealed material is found to be comparable or larger in intensity when compared with optimally prepared furnace annealed material. Photoluminescence profiling and p-n junction studies show that migration of implanted nitrogen and related damage can be limited to the as-implanted profile when SLEB annealing is used.
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