Encapsulation and Implantation Studies of Indium Phosphide
Oberstar, John David
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https://hdl.handle.net/2142/69240
Description
Title
Encapsulation and Implantation Studies of Indium Phosphide
Author(s)
Oberstar, John David
Issue Date
1982
Department of Study
Electrical Engineering
Discipline
Electrical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Electronics and Electrical
Abstract
Successful ion implantation of InP will depend on detailed information regarding the protective qualities of prospective encapsulants and also the thermal annealing parameters (i.e., time and temperature) required to reorder the implant damaged lattice and to activate the implanted impurity. Using Auger electron spectroscopy (AES), secondary ion mass spectrometry (SIMS), and low temperature photoluminescence (PL) the InP encapsulation properties of CVD SiO(,2), CVD PSG (phosphosilicate glass), and rf plasma-deposited Si(,3)N(,4) have been examined. In addition, the annealing/implantation characteristics of semi-insulating (SI) InP implanted with ('4)He and ('9)Be have been studied using PL and SIMS.
Following 60 min, 750(DEGREES)C anneals, indium is detected on the surfaces of Si(,3)N(,4) encapsulant layers by both AES and SIMS. SIMS results also suggest that indium may outdiffuse through PSG caps during similar anneals. Indiffusion of Si from the cap to the underlying InP is found to be significant in annealed SiO(,2) and Si(,3)N(,4) capped samples. Little such Si contamination is observed after annealing InP with PSG encapsulants. PL measurements indicate that the spectral features and luminosity levels of capped and annealed InP are least altered by PSG encapsulants.
PL measurements indicate that following 51 keV, 10('13)-10('15) cm('-2) implants of ('4)He, thirty minute anneals at 750(DEGREES)C appear sufficient to restore the lattice to approximately pre-implant levels of quality. For 30 min anneals of 100 keV, ('9)Be implanted InP, maximum Be activation appears to occur for all doses (10('13)-10('15) cm('-2)) at (TURN) 750(DEGREES)C between 30-60 min. The Be acceptor ionization energy is estimated to be 41.3 (+OR-) 3 meV with characteristic emission at 1.382 eV (5(DEGREES)K).
Under typical annealing conditions for InP (T (GREATERTHEQ) 700(DEGREES)C, t = 15-30 min) it is observed using SIMS that implanted ('9)Be is a rapid diffusant in SI InP. High dose (10('15) cm('-2)), 100 keV implants of ('9)Be into SI InP result in structured and correlated Be and Cr or Fe atomic profiles. In addition, flat tails of ('9)Be extending over distances on the order of a micron are observed in high dose implanted InP. Such constant-concentration tails of ('9)Be are not observed in comparably processed, undoped vapor phase epitaxial (VPE) InP.
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