Crystal Growth, Phase Transformations, and Electrical Properties of Metastable Gallium Antimonide-Germanium Alloys
Cadien, Kenneth Charles
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https://hdl.handle.net/2142/68654
Description
Title
Crystal Growth, Phase Transformations, and Electrical Properties of Metastable Gallium Antimonide-Germanium Alloys
Author(s)
Cadien, Kenneth Charles
Issue Date
1981
Department of Study
Metallurgy and Mining Engineering
Discipline
Metallurgical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Metallurgy
Language
eng
Abstract
Single crystal metastable (GaSb)(,1-x)Ge(,x) alloys have been grown on GaAs substrates with compositions across the GaSb-Ge pseudobinary phase diagram. The alloys transformed to the equilibrium state through a continuous series of metastable states at a rate limited by diffusion. Ion bombardment during growth had a strong influence on the transformation rate kinetics; however, no preferential sputtering occurred during the sputter growth of as-deposited single phase alloys. The measured enthalpies of transformation from the crystalline metastable to the equilibrium state agreed with enthalpies predicted using the regular solution model. The measured carrier concentrations and mobilities were consistent with the materials being disordered.
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