Vapor Phase Epitaxial Growth of Gallium Arsenide, Indium Phosphide, and Indium Gallium Arsenide by the Hydride Technique
Zinkiewicz, Lawrence Martin
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https://hdl.handle.net/2142/66248
Description
Title
Vapor Phase Epitaxial Growth of Gallium Arsenide, Indium Phosphide, and Indium Gallium Arsenide by the Hydride Technique
Author(s)
Zinkiewicz, Lawrence Martin
Issue Date
1981
Department of Study
Electrical Engineering
Discipline
Electrical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Electronics and Electrical
Language
eng
Abstract
The use of InGaAsP alloys for optical fiber communication systems is discussed. The advantages and various types of vapor phase epitaxial growth systems are examined before looking at the open tube growth process in detail. Using the criteria for high purity systems, which are thoroughly reviewed, a vertical hydride system capable of growing InGaAsP alloys has been built. The initial growth of GaAs and InP is described and problems encountered with the use of this semi-automatic system are examined.
The correction of these problems led to the construction of an automatic system which is discussed in detail. Undoped GaAs and InP expitaxial layers have been grown with carrier concentrations as low as 3 x 10('13) cm('-3) (77(DEGREES)K) for the former and 2 x 10('14) cm('-3) (77(DEGREES)K) for the latter with liquid nitrogen mobilities as high as 90,000 cm('2)/Vs and 60,000 cm('2)/Vs respectively. The results of photoluminescence measurements on some of these samples are examined.
Lattice-matched In(,x)Ga(,1-x)As layers have been grown on InP substrates but display broad x-ray line widths. The probable causes of the broad line widths have been examined. Initial results indicate that the preheat treatment affects the line widths.
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