Studies of Electron Traps in Gallium Arsenide and Gallium Arsenide Phosphide by Deep Level Transient Spectroscopy
Day, Ding-Yuan Samuel
This item is only available for download by members of the University of Illinois community. Students, faculty, and staff at the U of I may log in with your NetID and password to view the item. If you are trying to access an Illinois-restricted dissertation or thesis, you can request a copy through your library's Inter-Library Loan office or purchase a copy directly from ProQuest.
Permalink
https://hdl.handle.net/2142/66229
Description
Title
Studies of Electron Traps in Gallium Arsenide and Gallium Arsenide Phosphide by Deep Level Transient Spectroscopy
Author(s)
Day, Ding-Yuan Samuel
Issue Date
1980
Department of Study
Electrical Engineering
Discipline
Electrical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Electronics and Electrical
Language
eng
Abstract
System effects and data analysis for deep level transient spectroscopy (DLTS) have been examined and applied to study the deep levels in the GaAs-GaP system.
Studies of typical DLTS systems using either the lock-in amplifier or the dual-channel boxcar averager are presented. The effects of non-zero gate width for the boxcar averager, phase angle adjustment for the lock-in amplifier, and response time of a typical commerical capacitance meter are investigated. Errors introduced in the measurements by these effects are calculated for typical cases. Measurements of the gold level in silicon are presented, along with calculated corrections. We find the correction to be minimal in the boxcar-averager method, but significant in the lock-in amplifier approach.
A DLTS system is described for measuring deep levels in diodes exhibiting large leakage currents. A capacitance bridge is used employing the diode to be tested along with a dummy diode of similar characteristics. The DLTS spectrum of a leaky GaAs planar diode is measured and compared to experimental results obtained with two standard DLTS systems. It is shown that measurements with the standard systems are impossible in certain temperature ranges because of overloading problems. The approach described here, however, gives the DLTS spectrum between 77(DEGREES) and 300(DEGREES)K.
In the study of the main electron trap (0.83eV from the conduction band) in VPE n-GaAs, we have examined the annealing behavior of this deep level and the effect of the implanted species. In the annealing study, we find that the trap concentration change is related to the Ga vacancy. In the implantation study, we observed that the trap concentration changes depending on whether the implanted species is incorporated into Ga or As substitutional sites. The DLTS results suggest that the main electron trap involves the Ga vacancy.
Electron traps in VPE n-GaAs(,1-x)P(,x) alloys with several compositions have been examined. It is observed that the DLTS spectra for the as-grown alloys are similar to each other. There are differences in DLTS spectra among the N-doped, N-free, and N-implanted samples for the same alloy composition. Deep levels caused by the radiation-induced damage are observed in the N-implanted samples.
Use this login method if you
don't
have an
@illinois.edu
email address.
(Oops, I do have one)
IDEALS migrated to a new platform on June 23, 2022. If you created
your account prior to this date, you will have to reset your password
using the forgot-password link below.
